Advanced Wide Band Gap Semiconductor Devices for Rational Use of Energy
ref. Consolider-RUE
National public
Initial date: 2009-01-01
Final date: 2015-12-31
Wide Band Gap Wide Band Gap


The main objective of this project is to develop a real first generation of new Wide Band Gap power semiconductor devices that allow both an important improvement in the performance of existing converters and the development of new power converters; in both cases seeking a more rational use of the electric energy. Among the possible candidates to be the base materials for these new power devices, SiC and GaN present the best trade-off between theoretical characteristics (high-voltage blocking capability, high-temperature operation and high switching frequencies) and real commercial availability of the starting material and maturity of their technological processes.

Local members

Alvaro Luna

PhD. Senior Researcher.

Joan Rocabert

PhD. Senior Researcher

Jose Ignacio Candela

PhD. Senior Researcher. Project Responsible

Juan Ramon Hermoso

PhD. Senior Researcher. Administrative Manager.



Conference paper


Partnership centers

Technical University of Catalonia (UPC) - BarcelonaTech, CNM-Centro Nacional de Microelectrónica; UPM-ISOM - Universidad Politécnica de Madrid; UO-Uni