This paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based on selection of the most convenient configuration, in terms of switching frequency and design of the line filter, in order to minimize the overall losses in the system. In this work two types of semiconductor devices are considered: silicon IGBT and silicon carbide MOSFET for the design of a 100 kVA system, and they performance is compared. The AC-DC converter parameters, the design methodology and preliminary simulation results for representatives of Si IGBT and SiC MOSFET modules are presented.