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PV Panel Model Based on Datasheet Values
Location: Spain
Publication date: 2007-11-05
Published in: IEEE International Symposium on Industrial Electronics 2007, Vigo (Spain) - ISIE 2007
ref. DOI: 10.1109/ISIE.2007.4374981
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Sera, D. , Teodorescu, R.

 

Abstract

This work presents the construction of a model for a PV panel using the single-diode five-parameters modelbased exclusively on data-sheet parameters. The model takes into account the series and parallel (shunt) resistance of the panel. The equivalent circuit and the basic equations of the PV cell/panel in Standard Test Conditions (STC)1 are shown, as well as the parameters extraction from the data-sheet values. The temperature dependence of the cell dark saturation current is expressed with an alternative formula, which gives better correlation with the datasheet values of the power temperature dependence. Based on these equations, a PVpanel model, which is able to predict the panel behavior in different temperature and irradiance conditions, is built and tested.